H5TQ1G63BFR

The H5TQ1G43BFR-xxC, H5TQ1G83BFR-xxC and H5TQ1G63BFR-xxC are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

Features

Technical Data Sheet

Technical Data Sheet
Part Number Rev. Update Date Remark
H5TQ1G63BFR 1.1 2010-07-14  

Simulation Model

Simulation Model
Part Number Rev. Update Date Remark
IBIS 1.5 2010-03-15  
Hspice 1.0 2009-04-24  

Device Operation

Device Operation
File Name Update Date Remark
DDR3_device_operation_timing_diagram.pdf 2010-03-04  

Ordering Information