| 2010 |
Jan. |
2010 |
Development of 44nm 2Gb Mobile DRAM |
| 2009 |
Dec. |
2009 |
Development of 44nm 2Gb GDDR5 |
| Nov. |
2009 |
Intel Validation of 44nm 2Gb DDR3 DRAM |
| Oct. |
2009 |
Introduction of the second generation 1Gb DDR3 |
| Aug. |
2009 |
Intel validation of 54nm 4Gb mobile DRAM |
| Jun. |
2009 |
Validation of 10 products including 4GB SoDIMM for Intel¡¯s DDR3-only platform |
| May. |
2009 |
Signed the Collaboration Agreement to jointly develop controllers for NAND solutions with Numonyx and Phison |
| Agreed to establish a backend JV in China with Wuxi Industrial Development Group Company Ltd. |
| Feb. |
2009 |
Development of 44nm DDR3 DRAM |
| Jan. |
2009 |
Intel validation of 4GB DDR3 ECC UDIMM |
| 2008 |
Dec. |
2008 |
Development of 54nm 2Gb mobile DRAM |
| Aug. |
2008 |
Development of 16GB RDIMM utilizing MetaRAMTM technology |
| Strategic alliance with Numonyx for joint development of NAND flash memory products and technology |
| May. |
2008 |
Signed an amendment to strengthen long-term strategic alliance with ProMOS Technologies |
| Apr. |
2008 |
Signed the License and Joint Development Agreement for STT-RAM with Grandis Inc. |
| Mar. |
2008 |
Formed a strategic alliance with Fidelix Co. |
| 2007 |
Nov. |
2007 |
Signed the Partnership Agreement with SiliconFile Technologies Inc. to cooperate on the CIS business |
| Oct. |
2007 |
Re-entered the non-memory business |
| Signed the Technology and Licensing Agreement for PRAM with Ovonyx |
| Aug. |
2007 |
Signed the Technology and Licensing Agreement for ZRAM with InnovativeSilicon |
| Apr. |
2007 |
Groundbreaking of 300mm fab in Cheongju, Korea |
| Mar. |
2007 |
Signed the Semiconductor Patent Cross Licensing and Supply Agreement with Toshiba |
| Signed the Patent Cross License Agreement and MOU to form JV for x4 technology with SanDisk |
| Jan. |
2007 |
Foundation of sales subsidiary in India (HSIS) |
| 2006 |
Oct. |
2006 |
Opening of the China manufacturing site |
| Sep. |
2006 |
Opening of a 300mm R&D fab (R3) |
| Apr. |
2006 |
Foundation of the manufacturing company in China (HSMC) |
| 2005 |
Jul. |
2005 |
Termination of the Corporate Restructuring Promotion Act and business normalization |
| Apr. |
2005 |
Foundation of China JV (HSSL) with STMicroelectronics |
| Jan. |
2005 |
Formed a strategic alliance with ProMOS |
| 2001~2004 |
Oct. |
2004 |
Transfer the Non-memory Business Unit to MagnaChip Semiconductor Ltd. |
| Aug. |
2004 |
Signed the Cooperative Agreement with Wuxi city to establish a manufacturing site in China |
| Jun. |
2003 |
Established the Environment/Safety/Health Lab |
| Apr. |
2003 |
Strategic alliance with STMicroelectronics for joint development of NAND flash |
| Jun. |
2002 |
Change of major shareholder to KEB |
| Oct. |
2001 |
Placed under the Corporate Restructuring Promotion Act |
| Aug. |
2001 |
Official disaffiliation from the Hyundai Business Group |
| Mar. |
2001 |
Change of company name to ¡®Hynix Semiconductor Inc.¡¯ |
| 1983~1999 |
Oct. |
1999 |
Merger with LG Semiconductor |
| Dec. |
1996 |
Initial public offering |
| Feb. |
1983 |
Establishment of Hyundai Electronics Industries Co., Ltd. |