 Introduce 54nm 256Mb & 512Mb DDR SDRAMs |
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 Hynix Introduces 54nm 256Mb and 512Mb DDR SDRAMs |
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Hynix Semiconductor has introduced 256Mb and 512Mb DDR SDRAMs based on its leading edge 54nm process. The products feature low IDD currents without sacrificing the high speed requirements of consumer applications
These products operate up to 500Mbps(Megabits per second), significantly faster than the previous generation.
The product meets JEDEC standards and is designed for use in Digital TV, Set top box, and Hard Disk Drive applications requiring higher data transfer rates and low power consumption.
Hynix plans to maintain its competitiveness with a diversified product line-up and capitalize on its technology leadership in the future.
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| Product Information |
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| Product |
54nm based 256Mb & 512Mb DDR |
| Part number |
H5DU2562GTR / H5DU5162ETR |
| Power Supply |
2.5V กพ 0.2V |
| I/O |
x8 / x16 |
| Package |
66 TSOP-II / 60 FBGA |
| Operation Temp. |
0กษ ~ 70กษ (Commercial)
-40กษ ~ 85กษ (Industrial) |
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| Product Availability |
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| 256Mb &512Mb DDR |
Now (Mass production) |
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For more information on the product, please contact us.