Release E2NAND2.0 for NAND Flash applications |
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Product Information & Introduction |
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Hynix has announced E2NAND2.0 for next generation NAND Flash applications, and is releasing customer qualification samples to customers.
Due to rapid changes in customer requirements for high density non-volatile storage, new applications demand new functions which are offered by E2NAND 2.0, enabling designers to develop a high quality end use products.
E2NAND 2.0 comes in a high density stack comprising the NAND Flash Controller and several NAND Flash dies. The existing E2NAND 1.0 is mainly focused on ECC functions to check and correct errors, on the other hand E2NAND 2.0 not only has the ECC function, but also features an advanced buffer and parallel processing function that significantly improves performance. New commands have been added to the command set which has been simplified and made more user friendly than the previous generation.
Hynix has developed products based on customer needs. The new E2NAND 2.0 is one such example. We will continue to develop products that meet the needs of the market and enable new applications.
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Key Features |
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| Items |
Features |
| Physical Interface |
Support two host channel |
| Memory Organization |
Page size |
(8192+32) bytes |
| Block size |
256 pages(2M+8K bytes) |
| CAU size |
1,024 blocks |
| E2NAND2.0 Organization |
16GB |
1+4-stack |
| 32GB |
1+8-stack |
| Operation Queue Size |
Multipage Read |
16 |
| Multipage Program |
16 |
| Multiblock Erase |
16 |
| Multipage Prep Buffer Size |
512 |
| Read Time |
Random Access (4KB) |
250งม (Typ.) |
| Random Access (8KB) |
400งม (Typ.) |
| tRC |
20ns (Min) |
| Maximum performance |
75MB/s |
| Program Time |
Page Program |
1700งม (Typ.) |
| tWC |
20ns (Min) |
| Performance |
37~40MB/s (both channel) |
| Erase Time |
Block Erase |
2.5ms (Typ.) |
| Reliability |
Block0 |
100 P/E+5Y+1M Read |
| Data Block |
3K P/E+1Y+10K Read |
| Package |
LGA (14x18x1mm) |
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Product Lineup |
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| Part Number |
Vcc |
VccQ |
Organization (Controller+ NAND Flash) |
Density |
| H2DUDG8VD1MYR |
3.0V |
3.0V |
1 + 4 |
16GB |
| H2DQDG8VD1MYR |
1.8V |
| H2DUEG8YD1MYR |
3.0V |
1 + 8 |
32GB |
| H2DQEG8YD1MYR |
1.8V |
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