| Product Information |
| Hynix Semiconductor has developed 44nm based 2Gb DDR3 DRAM operating at 1866Mbps and engineering samples of the components as well as Registered DIMM for server, Unbuffered DIMM for desktop and SODIMM for notebook, are being tested by the major CPU and chipset manufacturers. The 44nm process improves performance by approximately 40% over former 54nm technologies, increasing maximum data transfer speeds to 1866Mbps with 16bit I/O(Input and Output). With a 16-bit I/O this results in an effective bandwidth of 3.7Gigabyte per second which is equivalent to processing digital content of 3 movies. Hynix will be ready with customer samples of 44nm 2Gb DDR3, 1866Mbps by early next year, and also be in volume production to satisfy the increasing demand for high performance memory in Notebook and Desktop systems. Hynix expects that 1866Mbps will be adopted next year by major system manufacturers in a wide range of applications. |
| DDR3 Market Trend by Speed |
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